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| UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V FEATURES OUTLINE DRAWING * N-Channel Enhancement Mode Device * Applications * 150 Watts CW * Common Source Gemini Configuration * RESFET Structure * Internal Input Impedance Matching * Gold Metallization ABSOLUTE MAXIMUM RATINGS AT 25C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Dissipation @25C Storage Temperature Junction Temperature Thermal Resistance VDS VGS IDS PD Tstg Tj 60 20 28 233 -55 to +150 200 0.75 Units V V A W C C C/W jc ELECTRICAL CHARACTERISTICS AT 25C (*per side) Parameter Symbol Min Max Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Reverse Capacitance Output Capacitance Power Gain Collector Efficiency Load Mismatch Tolerance BVDSS IDSS IGSS VGS(th) Gm CISS CRSS COSS GP 10 50 60 2.0 1.0 4.0 2.0 6.0 200 50 14 3.0:1 Units V mA A V S pF pF pF dB % - Test Conditions ID=40 mA, VGS=0.0 V* VDS=28.0 V, VGS=0.0 V* VGS=20 V, VDS=0.0 V* VDS=10.0 V, IDS=200 mA* VDS=10.0 V, IDS=2000 mA (pulsed)* VDS=28.0 V, f=1.0 MHz (Reference Only)* VDS=28.0 V, f=1.0 MHz* VDS=28.0 V, f=1.0 MHz* VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz VSWR TYPICAL OPTIMUM DEVICE IMPEDANCE F (MHz) Z in () Z load () 935 960 4.6 + j8.0 4.7 + j7.8 2.3 + j3.1 2.4 + j3.1 M/A-COM POWER TRANSISTORS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96 TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J Output Power vs Input Power Power Output (W) 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 Power Input (W) 960 MHz 935 MHz Vds = 26 V Idq = .40 A Output Power vs Drain Voltage Power Output (W) 100 90 80 70 60 50 40 30 20 10 0 19 21 23 25 27 29 Drain Voltage (V) Frequency = 960 MHz Idq = .40 A Pin = 8.0 W Gain vs. Frequency 12 11.5 11 10.5 10 9.5 9 932 Gain (dB) Efficiency (%) 70 65 60 55 50 45 40 35 936 940 944 948 952 956 960 964 30 932 936 Vds = 26 V Efficiency vs. Frequency Idq = .40 A Po = 80 W 940 944 948 952 956 960 964 Frequency (MHz) Frequency (MHz) Gain vs. Temperature Gain (dB) 13 12 11 10 9 8 20 40 60 80 100 120 Case Temperature (C) 80 70 60 50 40 30 20 Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz 10 0 0 5 Capacitance vs. Voltage Crss Coss F = 1 MHz 10 15 20 25 30 35 Drain Voltage (V) M/A-COM POWER TRANSISTORS * 1742 CRENSHAW BLVD * TORRANCE, CA 90501 (310) 320-6160 * FAX (310) 618-9191 M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96 RF MOSFET Power Transistor, 15OW, 28V UF2815OJ v2.00 Typical Device Impedance Frequency (MHz) 100 300 500 V,,=28 Z,, (OHMS) 3.7 - j 5.9 2.7 - j 5.8 2.5 + j 2.9 V, I,,=400 ?A, PouT=150.0 Watts Z LoAD (OHMS) 3.0 - j 0.7 2.6 - j 0.55 2.5 - j 0.5 Z,, is the series equivalent input impedance of the device from gate to gate. as measured from drain to drain. Z LOAD the optimum series equivalent is .. load impedance RF Test Fixture `V,BIAS RFDPIJT RFDJTPUT m cl &wR c7. Y c4 & ls cl6 RI P2 R3 17 n T.3345 16 u L2 L34 Ru mhls Specifications Subject to Change Without Notice. M/A-COM, Inc. |
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